Effect Of Interfacial Top Electrode Layer On The Performance Of Niobium Oxide Based Resistive Random Access Memory

Effect Of Interfacial Top Electrode Layer On The Performance Of Niobium Oxide Based Resistive Random Access Memory

Bibliographic Details
Main Author: Manjunath, Vishal Jain
Language:English
Published: University of Cincinnati / OhioLINK 2019
Subjects:
Electrical Engineering
Resistive Random Access Memory
Aluminum
Interfacial layer
Top Electrode
Niobium oxide
Gibbs Free Energy
Online Access:http://rave.ohiolink.edu/etdc/view?acc_num=ucin1552657250617694
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spelling ndltd-OhioLink-oai-etd.ohiolink.edu-ucin15526572506176942021-08-03T07:09:37Z Effect Of Interfacial Top Electrode Layer On The Performance Of Niobium Oxide Based Resistive Random Access Memory Manjunath, Vishal Jain Electrical Engineering Resistive Random Access Memory Aluminum Interfacial layer Top Electrode Niobium oxide Gibbs Free Energy Resistive RAM has high scalability with fast switching speed, low operating voltage making it one of the promising emerging nonvolatile memory technologies. Interfacial layer between the electrode and metal-oxide interface in a Resistive RAM (ReRAM) could either enhance or deteriorate the switching performance of the device. In this study, we investigate the role of Aluminum (Al) as an interfacial layer under the top electrode (TE) layer in a Niobium Oxide (Nb2O5) based ReRAM. We compare the Current-Voltage (I-V), Capacitance-Voltage (C-V) characteristics and endurance effects of the Nb2O5 based ReRAM with an Al interfacial layer below the Tungsten (W) TE and a control sample without the Al interfacial layer to contrast the performance of each type. Additionally, we connect the tested device behavior with the enthalpy, entropy, and Gibb’s free energy of Aluminum and Tungsten which are the metal electrode materials to illustrate that aluminum is an inefficient interfacial layer in the niobium oxide ReRAM. 2019-07-11 English text University of Cincinnati / OhioLINK http://rave.ohiolink.edu/etdc/view?acc_num=ucin1552657250617694 http://rave.ohiolink.edu/etdc/view?acc_num=ucin1552657250617694 unrestricted This thesis or dissertation is protected by copyright: all rights reserved. It may not be copied or redistributed beyond the terms of applicable copyright laws.
collection NDLTD
language English
sources NDLTD
topic Electrical Engineering
Resistive Random Access Memory
Aluminum
Interfacial layer
Top Electrode
Niobium oxide
Gibbs Free Energy
spellingShingle Electrical Engineering
Resistive Random Access Memory
Aluminum
Interfacial layer
Top Electrode
Niobium oxide
Gibbs Free Energy
Manjunath, Vishal Jain
Effect Of Interfacial Top Electrode Layer On The Performance Of Niobium Oxide Based Resistive Random Access Memory
author Manjunath, Vishal Jain
author_facet Manjunath, Vishal Jain
author_sort Manjunath, Vishal Jain
title Effect Of Interfacial Top Electrode Layer On The Performance Of Niobium Oxide Based Resistive Random Access Memory
title_short Effect Of Interfacial Top Electrode Layer On The Performance Of Niobium Oxide Based Resistive Random Access Memory
title_full Effect Of Interfacial Top Electrode Layer On The Performance Of Niobium Oxide Based Resistive Random Access Memory
title_fullStr Effect Of Interfacial Top Electrode Layer On The Performance Of Niobium Oxide Based Resistive Random Access Memory
title_full_unstemmed Effect Of Interfacial Top Electrode Layer On The Performance Of Niobium Oxide Based Resistive Random Access Memory
title_sort effect of interfacial top electrode layer on the performance of niobium oxide based resistive random access memory
publisher University of Cincinnati / OhioLINK
publishDate 2019
url http://rave.ohiolink.edu/etdc/view?acc_num=ucin1552657250617694
work_keys_str_mv AT manjunathvishaljain effectofinterfacialtopelectrodelayerontheperformanceofniobiumoxidebasedresistiverandomaccessmemory
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