Ballistic Electron Emission Microscopy and Internal Photoemission Study on Metal Bi-layer/Oxide/Si, High-<i>k</i> Oxide/Si, and “End-on” Metal Contacts to Vertical Si Nanowires

Ballistic Electron Emission Microscopy and Internal Photoemission Study on Metal Bi-layer/Oxide/Si, High-<i>k</i> Oxide/Si, and “End-on” Metal Contacts to Vertical Si Nanowires

Bibliographic Details
Main Author: Cai, Wei
Language:English
Published: The Ohio State University / OhioLINK 2010
Subjects:
Physics
ballistic electron emission microscopy
BEEM
internal photoemission
metal-bialyer/SiO2 interface
high-k oxide/Si
metal/oxide/semiconductor
end-on metal contact
vertical Si NWs
current suppression
Schottky barrier
interface state charge
Online Access:http://rave.ohiolink.edu/etdc/view?acc_num=osu1269521615

Internet

http://rave.ohiolink.edu/etdc/view?acc_num=osu1269521615

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