Zinc tin oxide thin-film transistor circuits
The primary objective of this thesis is to develop a process for fabricating integrated circuits based on thin-film transistors (TFTs) using zinc tin oxide (ZTO) as the channel layer. ZTO, in contrast to indium- or gallium-based amorphous oxide semiconductors (AOS), is perceived to be a more commer...
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| Language: | en_US |
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2008
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| Online Access: | http://hdl.handle.net/1957/9975 |