Electrochemical etch characteristics of (100) silicon in tetramethyl ammonium hydroxide
A study of potentiostatic and galvanostatic electrochemical etching of silicon in tetramethylammonium hydroxide (TMAH) has been carried out. In TMAH baths,, we find that biased (100) silicon etch rates increase 21% over OCP etch rates. For TMAH baths seasoned with silicon, biased silicon etch rates...
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| Language: | en_US |
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2012
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| Online Access: | http://hdl.handle.net/1957/30888 |