Investigation of bipolar resistive switching in zinc-tin-oxide for resistive random access memory
Resistive random access memory (RRAM) is a non-volatile memory technology based on resistive switching in a dielectric or semiconductor sandwiched between two different metals. Also known as memristors, these devices are potential candidates for a next-generation replacement for flash memory. In thi...
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| Language: | en_US |
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2012
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| Online Access: | http://hdl.handle.net/1957/26622 |