Role of atomic nitrogen during GaN growth by plasma-assisted molecular beam epitaxy revealed by appearance mass spectrometry

Role of atomic nitrogen during GaN growth by plasma-assisted molecular beam epitaxy revealed by appearance mass spectrometry

Bibliographic Details
Main Authors:	Osaka, J., Kumar, Senthil M., Toyoda, H., Ishijima, T., Sugai, H., Mizutani, T.
Language:	en
Published:	American Institute of Physics 2007
Online Access:	http://dx.doi.org/10.1063/1.2734390 http://hdl.handle.net/2237/8775

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