Contribution of local atomic arrangements and electronic structure to high electrical resistivity in the Al_{82.6-x}Re_{17.4}Si_x (7≼x≼12) 1/1-1/1-1/1 approximant

Contribution of local atomic arrangements and electronic structure to high electrical resistivity in the Al_{82.6-x}Re_{17.4}Si_x (7≼x≼12) 1/1-1/1-1/1 approximant

Bibliographic Details
Main Authors: Takeuchi, T., Onogi, T., Otagiri, T., Mizutani, U., Sato, H., Kato, K., Kamiyama, T.
Language:en
Published: The American Physical Society 2003
Online Access:http://dx.doi.org/10.1103/PhysRevB.68.184203
http://hdl.handle.net/2237/7116

Internet

http://dx.doi.org/10.1103/PhysRevB.68.184203
http://hdl.handle.net/2237/7116

Similar Items