On the stability of circuits switched by wide band-gap power semiconductor devices
<p>The commercialization of wide band-gap devices such as silicon carbide and gallium nitride transistors has made it possible for power electronics applications to achieve unprecedented performance in terms of efficiency and power density. However, the device characteristics which make this p...
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| Format: | Others |
| Language: | en |
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MSSTATE
2013
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| Online Access: | http://sun.library.msstate.edu/ETD-db/theses/available/etd-07032013-121008/ |