The effect of proton bombardment on semiconductor saturable absorber structure
Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2000. === Includes bibliographical references (p. 83-86). === Carrier lifetime reduction resulting from proton bombardment of InGaAs/InP-based semiconductor saturable absorbers was studied exp...
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| Format: | Others |
| Language: | English |
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Massachusetts Institute of Technology
2005
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| Online Access: | http://hdl.handle.net/1721.1/8808 |