On the design of single electron transistors for the measurement of spins in phosphorus doped silicon
Thesis (S.B.)--Massachusetts Institute of Technology, Dept. of Physics, 2012. === Cataloged from PDF version of thesis. === Includes bibliographical references (p. 66-67). === Phosphorus doped silicon is a prime candidate for spin based qubits. We plan to investigate a novel hybrid technique that co...
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| Format: | Others |
| Language: | English |
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Massachusetts Institute of Technology
2013
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| Online Access: | http://hdl.handle.net/1721.1/78520 |