Growth and characterization of gallium arsenide grown by conventional and current-controlled liquid phase epitaxy.
Thesis. 1978. Ph.D.--Massachusetts Institute of Technology. Dept. of Materials Science and Engineering. === MICROFICHE COPY AVAILABLE IN ARCHIVES AND SCIENCE. === Vita. === Includes bibliographical references. === Ph.D.
Main Author: | Gale, Ronald Paul |
---|---|
Other Authors: | August F. Witt. |
Format: | Others |
Language: | English |
Published: |
Massachusetts Institute of Technology
2007
|
Subjects: | |
Online Access: | http://hdl.handle.net/1721.1/39492 |
Similar Items
-
Dislocations in gallium arsenide deformed at high temperatures
by: Gallagher, Patrick John
Published: (2010) -
Radiative heat transfer in gallium arsenide lec crystal pullers
by: Bakeer, Muna
Published: (2010) -
Temperature and dislocation stress field models of the LEC growth of gallium arsenide
by: Schvezov, Carlos Enrique
Published: (2010) -
Epitaxial growth of gallium arsenide on zinc selenide /
by: Balch, Joseph W.
Published: (1971) -
Close-Spaced Vapor Transport and Photoelectrochemistry of Gallium Arsenide for Photovoltaic Applications
by: Ritenour, Andrew
Published: (2015)