Growth and characterization of gallium arsenide grown by conventional and current-controlled liquid phase epitaxy.

Growth and characterization of gallium arsenide grown by conventional and current-controlled liquid phase epitaxy.

Thesis. 1978. Ph.D.--Massachusetts Institute of Technology. Dept. of Materials Science and Engineering. === MICROFICHE COPY AVAILABLE IN ARCHIVES AND SCIENCE. === Vita. === Includes bibliographical references. === Ph.D.

Bibliographic Details
Main Author: Gale, Ronald Paul
Other Authors: August F. Witt.
Format: Others
Language:English
Published: Massachusetts Institute of Technology 2007
Subjects:
Materials Science and Engineering
Gallium arsenide crystals
Metal crystals Growth
Online Access:http://hdl.handle.net/1721.1/39492

Internet

http://hdl.handle.net/1721.1/39492

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