Growth and characterization of gallium arsenide grown by conventional and current-controlled liquid phase epitaxy.

Thesis. 1978. Ph.D.--Massachusetts Institute of Technology. Dept. of Materials Science and Engineering. === MICROFICHE COPY AVAILABLE IN ARCHIVES AND SCIENCE. === Vita. === Includes bibliographical references. === Ph.D.

Bibliographic Details
Main Author:	Gale, Ronald Paul
Other Authors:	August F. Witt.
Format:	Others
Language:	English
Published:	Massachusetts Institute of Technology 2007
Subjects:	Materials Science and Engineering Gallium arsenide crystals Metal crystals Growth
Online Access:	http://hdl.handle.net/1721.1/39492

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spelling	ndltd-MIT-oai-dspace.mit.edu-1721.1-394922019-05-02T16:26:07Z Growth and characterization of gallium arsenide grown by conventional and current-controlled liquid phase epitaxy. Gale, Ronald Paul August F. Witt. Massachusetts Institute of Technology. Dept. of Materials Science and Engineering Materials Science and Engineering Gallium arsenide crystals Metal crystals Growth Thesis. 1978. Ph.D.--Massachusetts Institute of Technology. Dept. of Materials Science and Engineering. MICROFICHE COPY AVAILABLE IN ARCHIVES AND SCIENCE. Vita. Includes bibliographical references. Ph.D. 2007-11-16T14:13:28Z 2007-11-16T14:13:28Z 1978 1978 Thesis http://hdl.handle.net/1721.1/39492 05881926 eng M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission. http://dspace.mit.edu/handle/1721.1/7582 223 leaves application/pdf Massachusetts Institute of Technology
collection	NDLTD
language	English
format	Others
sources	NDLTD
topic	Materials Science and Engineering Gallium arsenide crystals Metal crystals Growth
spellingShingle	Materials Science and Engineering Gallium arsenide crystals Metal crystals Growth Gale, Ronald Paul Growth and characterization of gallium arsenide grown by conventional and current-controlled liquid phase epitaxy.
description	Thesis. 1978. Ph.D.--Massachusetts Institute of Technology. Dept. of Materials Science and Engineering. === MICROFICHE COPY AVAILABLE IN ARCHIVES AND SCIENCE. === Vita. === Includes bibliographical references. === Ph.D.
author2	August F. Witt.
author_facet	August F. Witt. Gale, Ronald Paul
author	Gale, Ronald Paul
author_sort	Gale, Ronald Paul
title	Growth and characterization of gallium arsenide grown by conventional and current-controlled liquid phase epitaxy.
title_short	Growth and characterization of gallium arsenide grown by conventional and current-controlled liquid phase epitaxy.
title_full	Growth and characterization of gallium arsenide grown by conventional and current-controlled liquid phase epitaxy.
title_fullStr	Growth and characterization of gallium arsenide grown by conventional and current-controlled liquid phase epitaxy.
title_full_unstemmed	Growth and characterization of gallium arsenide grown by conventional and current-controlled liquid phase epitaxy.
title_sort	growth and characterization of gallium arsenide grown by conventional and current-controlled liquid phase epitaxy.
publisher	Massachusetts Institute of Technology
publishDate	2007
url	http://hdl.handle.net/1721.1/39492
work_keys_str_mv	AT galeronaldpaul growthandcharacterizationofgalliumarsenidegrownbyconventionalandcurrentcontrolledliquidphaseepitaxy
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Growth and characterization of gallium arsenide grown by conventional and current-controlled liquid phase epitaxy.

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