An evaluation of indium antimonide quantum well transistor technology

Thesis (M. Eng.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 2006. === Includes bibliographical references (leaves 98-102). === Motivated by the super high electron mobility of Indium Antimonide (InSb), researchers have seen great potential to use this new mat...

Full description

Bibliographic Details
Main Author: Liu, Jingwei, M. Eng. Massachusetts Institute of Technology
Other Authors: Thomas W. Eagar.
Format: Others
Language:English
Published: Massachusetts Institute of Technology 2007
Subjects:
Online Access:http://hdl.handle.net/1721.1/37883