Experimental study of electron velocity overshoot in silicon inversion layers

Experimental study of electron velocity overshoot in silicon inversion layers

Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Physics, 1994. === Includes bibliographical references (leaves 127-133). === by Hang Hu. === Ph.D.

Bibliographic Details
Main Author: Hu, Hang
Other Authors: Henry I. Smith.
Format: Others
Language:en_US
Published: Massachusetts Institute of Technology 2005
Subjects:
Physics
Online Access:http://hdl.handle.net/1721.1/28120

Internet

http://hdl.handle.net/1721.1/28120

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