Relaxation effects in MOS devices due to tunnel exchange with near-interface oxide traps

Relaxation effects in MOS devices due to tunnel exchange with near-interface oxide traps

Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1992. === Includes bibliographical references (p. 299-317). === by Theodore L. Tewksbury III. === Ph.D.

Bibliographic Details
Main Author: Tewksbury, Theodore L. (Theodore Locke)
Other Authors: Hae-Seung Lee.
Format: Others
Language:English
Published: Massachusetts Institute of Technology 2008
Subjects:
Electrical Engineering and Computer Science
Online Access:http://dspace.mit.edu/handle/1721.1/13238
http://hdl.handle.net/1721.1/13238

Internet

http://dspace.mit.edu/handle/1721.1/13238
http://hdl.handle.net/1721.1/13238

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