p-Channel gallium nitride transistor on Si substrate
Thesis: S.M., Massachusetts Institute of Technology, Department of Electrical Engineering and Computer Science, 2018. === Cataloged from PDF version of thesis. === Includes bibliographical references. === Gallium Nitride, a wide bandgap (3.4 eV) semiconductor, has outstanding attributes, such as, hi...
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| Format: | Others |
| Language: | English |
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Massachusetts Institute of Technology
2019
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| Online Access: | http://hdl.handle.net/1721.1/120405 |