Work function tuning of reactively sputtered HfxSiyNz metal gate electrodes for advanced CMOS technology

Work function tuning of reactively sputtered HfxSiyNz metal gate electrodes for advanced CMOS technology

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The aim of this research is to study the work function (Фm) tuning of the HfxSiyNz metal films through the incorporation of nitrogen. The Hf and the Si targets were co-sputtered in nitrogen (N2) and argon (Ar) plasma at 12mTorr. The gas flow ratio, RN = N2/ (N2+Ar), was adjusted to vary the nitrogen...

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Bibliographic Details
Main Author: Chaudhari, Rekha
Other Authors: Buchanan,Douglas (Electrical Engineering)
Published: 2013
Subjects:
work function tuning
HfxSiyNz
Online Access:http://hdl.handle.net/1993/18724
id ndltd-MANITOBA-oai-mspace.lib.umanitoba.ca-1993-18724
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spelling ndltd-MANITOBA-oai-mspace.lib.umanitoba.ca-1993-187242014-01-31T03:37:37Z Work function tuning of reactively sputtered HfxSiyNz metal gate electrodes for advanced CMOS technology Chaudhari, Rekha Buchanan,Douglas (Electrical Engineering) Shafai,Cyrus (Electrical Engineering) Ojo,Olanrewaju (Mechanical Engineering) work function tuning HfxSiyNz The aim of this research is to study the work function (Фm) tuning of the HfxSiyNz metal films through the incorporation of nitrogen. The Hf and the Si targets were co-sputtered in nitrogen (N2) and argon (Ar) plasma at 12mTorr. The gas flow ratio, RN = N2/ (N2+Ar), was adjusted to vary the nitrogen concentration in HfSiN films. The work function (Фm) of HfSiN gate extracted from the capacitance-voltage (CV) and the internal photoemission (IPE) measurements was found to decrease (from ~ 4.64eV to ~ 4.42eV) for increasing gas flow ratios (from 10% to 30%). X-ray photoelectron spectroscopy (XPS) was used for material characterization. During XPS analysis, the nitrogen (N 1s) peak intensity was observed to increase with increasing gas flow ratios. The results indicate that adjusting the nitrogen concentration in HfSiN films can be used to tune the HfSiN gate work function over ~ 0.2 eV tuning window. 2013-04-09T17:49:50Z 2013-04-09T17:49:50Z 2013-04-09 http://hdl.handle.net/1993/18724
collection NDLTD
sources NDLTD
topic work function tuning
HfxSiyNz
spellingShingle work function tuning
HfxSiyNz
Chaudhari, Rekha
Work function tuning of reactively sputtered HfxSiyNz metal gate electrodes for advanced CMOS technology
description The aim of this research is to study the work function (Фm) tuning of the HfxSiyNz metal films through the incorporation of nitrogen. The Hf and the Si targets were co-sputtered in nitrogen (N2) and argon (Ar) plasma at 12mTorr. The gas flow ratio, RN = N2/ (N2+Ar), was adjusted to vary the nitrogen concentration in HfSiN films. The work function (Фm) of HfSiN gate extracted from the capacitance-voltage (CV) and the internal photoemission (IPE) measurements was found to decrease (from ~ 4.64eV to ~ 4.42eV) for increasing gas flow ratios (from 10% to 30%). X-ray photoelectron spectroscopy (XPS) was used for material characterization. During XPS analysis, the nitrogen (N 1s) peak intensity was observed to increase with increasing gas flow ratios. The results indicate that adjusting the nitrogen concentration in HfSiN films can be used to tune the HfSiN gate work function over ~ 0.2 eV tuning window.
author2 Buchanan,Douglas (Electrical Engineering)
author_facet Buchanan,Douglas (Electrical Engineering)
Chaudhari, Rekha
author Chaudhari, Rekha
author_sort Chaudhari, Rekha
title Work function tuning of reactively sputtered HfxSiyNz metal gate electrodes for advanced CMOS technology
title_short Work function tuning of reactively sputtered HfxSiyNz metal gate electrodes for advanced CMOS technology
title_full Work function tuning of reactively sputtered HfxSiyNz metal gate electrodes for advanced CMOS technology
title_fullStr Work function tuning of reactively sputtered HfxSiyNz metal gate electrodes for advanced CMOS technology
title_full_unstemmed Work function tuning of reactively sputtered HfxSiyNz metal gate electrodes for advanced CMOS technology
title_sort work function tuning of reactively sputtered hfxsiynz metal gate electrodes for advanced cmos technology
publishDate 2013
url http://hdl.handle.net/1993/18724
work_keys_str_mv AT chaudharirekha workfunctiontuningofreactivelysputteredhfxsiynzmetalgateelectrodesforadvancedcmostechnology
_version_ 1716632145094508544

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