Work function tuning of reactively sputtered HfxSiyNz metal gate electrodes for advanced CMOS technology
The aim of this research is to study the work function (Фm) tuning of the HfxSiyNz metal films through the incorporation of nitrogen. The Hf and the Si targets were co-sputtered in nitrogen (N2) and argon (Ar) plasma at 12mTorr. The gas flow ratio, RN = N2/ (N2+Ar), was adjusted to vary the nitrogen...
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2013
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| Online Access: | http://hdl.handle.net/1993/18724 |