Molecular beam epitaxial growth, characterization, and nanophotonic device applications of InN nanowires on Si platform
Dislocation-free semiconductor nanowires are an extremely promising route towards compound semiconductor integration with silicon technology. However, precise control over nanowire doping, together with the surface charge properties, has remained a near-universal material challenge to date. In this...
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| Format: | Others |
| Language: | en |
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McGill University
2013
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| Online Access: | http://digitool.Library.McGill.CA:80/R/?func=dbin-jump-full&object_id=117217 |