Fin and Island Isolation of AlGaN/GaN HFETs and Temperature-dependent Modeling of Drain Current Characteristics of AlGaN/GaN HFETs

Fin and Island Isolation of AlGaN/GaN HFETs and Temperature-dependent Modeling of Drain Current Characteristics of AlGaN/GaN HFETs

Over the past two decades AlGaN/GaN Heterostructure Field Effect Transistors (HFETs) have been the target of many studies on their suitability for high-power and high-temperature applications. Due to the sizable inherent polarization effects, present in these heterostructure-based devices, the built...

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Bibliographic Details
Main Author: AlOtaibi, Bandar
Format: Others
Published: 2011
Online Access:http://spectrum.library.concordia.ca/7646/1/AlOtaibi_MSc_F2011.pdf
AlOtaibi, Bandar <http://spectrum.library.concordia.ca/view/creators/AlOtaibi=3ABandar=3A=3A.html> (2011) Fin and Island Isolation of AlGaN/GaN HFETs and Temperature-dependent Modeling of Drain Current Characteristics of AlGaN/GaN HFETs. Masters thesis, Concordia University.

Internet

http://spectrum.library.concordia.ca/7646/1/AlOtaibi_MSc_F2011.pdf
AlOtaibi, Bandar <http://spectrum.library.concordia.ca/view/creators/AlOtaibi=3ABandar=3A=3A.html> (2011) Fin and Island Isolation of AlGaN/GaN HFETs and Temperature-dependent Modeling of Drain Current Characteristics of AlGaN/GaN HFETs. Masters thesis, Concordia University.

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