Analytical Modeling of Drain-Current Characteristics of AlGaN/GaN HFETs with Incorporation of the Impacts of Virtual-Gate and Transferred-Electron Effect

Analytical Modeling of Drain-Current Characteristics of AlGaN/GaN HFETs with Incorporation of the Impacts of Virtual-Gate and Transferred-Electron Effect

GaN-based heterostructure field effect transistors (HFETs) have gained considerable attention in high-power microwave applications. So far, unsurpassed current levels and high output power at microwave frequencies have been achieved. However, the dominant factors limiting the reliability of these de...

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Bibliographic Details
Main Author: Moradi, Maziar
Format: Others
Published: 2010
Online Access:http://spectrum.library.concordia.ca/6987/1/Moradi_MASc_F2010.pdf
Moradi, Maziar <http://spectrum.library.concordia.ca/view/creators/Moradi=3AMaziar=3A=3A.html> (2010) Analytical Modeling of Drain-Current Characteristics of AlGaN/GaN HFETs with Incorporation of the Impacts of Virtual-Gate and Transferred-Electron Effect. Masters thesis, Concordia University.

Internet

http://spectrum.library.concordia.ca/6987/1/Moradi_MASc_F2010.pdf
Moradi, Maziar <http://spectrum.library.concordia.ca/view/creators/Moradi=3AMaziar=3A=3A.html> (2010) Analytical Modeling of Drain-Current Characteristics of AlGaN/GaN HFETs with Incorporation of the Impacts of Virtual-Gate and Transferred-Electron Effect. Masters thesis, Concordia University.

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