Bottom-Gate TFTs With Channel Layer Deposited by Pulsed PECVD
Nanocrystalline silicon (nc-Si:H) is a promising material for Thin-Film Transistors (TFTs) offering potentially higher mobilities and improved stability over hydrogenated amorphous silicon (a-Si:H). The slow growth rate of nc-Si:H can be overcome by using pulsed Plasma-Enhanced Chemical Vapour Dep...
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| Language: | en |
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University of Waterloo
2006
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| Online Access: | http://hdl.handle.net/10012/805 |
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