Bottom-Gate TFTs With Channel Layer Deposited by Pulsed PECVD

Bottom-Gate TFTs With Channel Layer Deposited by Pulsed PECVD

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Nanocrystalline silicon (nc-Si:H) is a promising material for Thin-Film Transistors (TFTs) offering potentially higher mobilities and improved stability over hydrogenated amorphous silicon (a-Si:H). The slow growth rate of nc-Si:H can be overcome by using pulsed Plasma-Enhanced Chemical Vapour Dep...

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Bibliographic Details
Main Author: Grant, David James
Language:en
Published: University of Waterloo 2006
Subjects:
Electrical & Computer Engineering
bottom-gate TFT thin film transistor pulsed PECVD plasma enhanced chemical deposition David Grant MVSystems Waterloo Masters
Online Access:http://hdl.handle.net/10012/805

Internet

http://hdl.handle.net/10012/805

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