Design and Optimization of Power MOSFET Output Stage for High-frequency Integrated DC-DC Converters
Switching device power losses place critical limits on the design and performance of high-frequency integrated DC-DC converters. Especially, the layout of metal interconnects in lateral power MOSFETs has a profound effect on their on-resistances and conduction power losses. This thesis presents an a...
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| Language: | en_ca |
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2012
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| Online Access: | http://hdl.handle.net/1807/65440 |