Electronic states and transport in GaNAs and GaAsBi
ct: This thesis explores the effect of incorporation of nitrogen or bismuth in GaAs on electronic states and transport, namely shallow in-gap states associated with nitrogen clusters in GaNAs and the hole mobility in GaAsBi. Lowered in-gap emission intensity in GaNAs epi-layers grown in under atomi...
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| Language: | English |
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University of British Columbia
2011
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| Online Access: | http://hdl.handle.net/2429/33196 |