Aspects of modeling III-V semiconductor devices
This thesis is concerned with novel modeling approaches to three GaAs-based devices, namely: the heterojunction bipolar transistor (HBT), the metal-semiconductor field-effect transistor (MESFET) and the modulation-doped field-effect transistor (MODFET). In GaAs-based HBTs, the transit time of car...
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| Language: | English |
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2008
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| Online Access: | http://hdl.handle.net/2429/2972 |