Modeling surface pattern evolution during thermal Cl₂ etching of GaAs (001)
The morphology of GaAs (001) single crystals during thermal chlorine etching was studied in this work. Models that can predict the evolution of 3 fxm pitch, 100 nm amplitude wet etched gratings were developed. A model was developed in which the etch rate and the angle of the exposed crystal plane...
| Main Author: | |
|---|---|
| Language: | English |
| Published: |
2009
|
| Online Access: | http://hdl.handle.net/2429/15165 |