Temperature dependence of photoluminescence of the dilute nitride semiconductor GaNA̜s₁₋
The design of a closed cycle optical cryostat for semiconductor crystal characterization is discussed. The system designed and developed is capable of performing photoluminescence, resistivity, and Hall measurements as a function of temperature from 10 K to higher than 300 K. Preliminary photolum...
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| Language: | English |
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2009
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| Online Access: | http://hdl.handle.net/2429/14471 |