Electron transport in wide energy gap semiconductors
The dependence of the low-field electron drift mobility on the crystal temperature is determined for a number of wide energy gap semiconductors of interest. The materials considered include gallium nitride, aluminium nitride, indium nitride, and zinc oxide; while indium nitride is not a wide energy...
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| Language: | English |
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University of British Columbia
2012
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| Online Access: | http://hdl.handle.net/2429/40421 |