Passivation of the p-n junction edge in high-power semiconductor silicon devices
Thin dielectric passivation layer is one of the basic construction elements in semiconductor device technology. There are few materials, from which the layers may be manufactured. They are oxides mainly, with Si02 as the most popular of them, although, the phosphor- and boron-silicon glasses are use...
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| Format: | Doctoral Thesis |
| Language: | English |
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Lithuanian Academic Libraries Network (LABT)
2009
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| Online Access: | http://vddb.library.lt/fedora/get/LT-eLABa-0001:E.02~2009~D_20090707_154834-90672/DS.005.1.02.ETD |