Passivation of the p-n junction edge in high-power semiconductor silicon devices

Passivation of the p-n junction edge in high-power semiconductor silicon devices

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Thin dielectric passivation layer is one of the basic construction elements in semiconductor device technology. There are few materials, from which the layers may be manufactured. They are oxides mainly, with Si02 as the most popular of them, although, the phosphor- and boron-silicon glasses are use...

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Bibliographic Details
Main Author: Šalucha, Darius
Other Authors: Ašmontas, Steponas
Format: Doctoral Thesis
Language:English
Published: Lithuanian Academic Libraries Network (LABT) 2009
Subjects:
Materials Engineering
Isolation groove
Glass passivation
Silicon high voltage devices
Izoliacinis griovelis
Stiklo pasyvacija
Galios diodai ir tiristoriai
Online Access:http://vddb.library.lt/fedora/get/LT-eLABa-0001:E.02~2009~D_20090707_154834-90672/DS.005.1.02.ETD

Internet

http://vddb.library.lt/fedora/get/LT-eLABa-0001:E.02~2009~D_20090707_154834-90672/DS.005.1.02.ETD

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