Porėtųjų GaAs sluoksnių formavimas elektrocheminio ėsdinimo būdu ir jų savybių priklausomybės tyrimas nuo technologinių sąlygų
The porous layers were formed on n and p-type GaAs (100) oriented wafers, which were doped with Cr and Zn. The resulting holes concentration in bulk was equal n - 1014 cm-3 and p - 1018 cm-3. The porous layers were formed by anodization process in different solutions such as HF:HNO3:H2O (40:1:59),...
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| Format: | Dissertation |
| Language: | Lithuanian |
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Lithuanian Academic Libraries Network (LABT)
2005
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| Online Access: | http://vddb.library.lt/fedora/get/LT-eLABa-0001:E.02~2005~D_20050608_095124-54742/DS.005.0.02.ETD |