Porėtųjų GaAs sluoksnių formavimas elektrocheminio ėsdinimo būdu ir jų savybių priklausomybės tyrimas nuo technologinių sąlygų

The porous layers were formed on n and p-type GaAs (100) oriented wafers, which were doped with Cr and Zn. The resulting holes concentration in bulk was equal n - 1014 cm-3 and p - 1018 cm-3. The porous layers were formed by anodization process in different solutions such as HF:HNO3:H2O (40:1:59),...

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Bibliographic Details
Main Author: Klimovičienė, Snieguolė
Other Authors: Šlekienė, Violeta
Format: Dissertation
Language:Lithuanian
Published: Lithuanian Academic Libraries Network (LABT) 2005
Subjects:
Online Access:http://vddb.library.lt/fedora/get/LT-eLABa-0001:E.02~2005~D_20050608_095124-54742/DS.005.0.02.ETD