B₁₂P₂: improved epitaxial growth and evaluation of α irradiation on its electrical transport properties

Doctor of Philosophy === Department of Chemical Engineering === James H. Edgar === The wide bandgap (3.35 eV) semiconductor icosahedral boron phosphide (B₁₂P₂) has been reported to self-heal from radiation damage from β particles (electrons) with energies up to 400 keV by demonstrating no lattice da...

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Bibliographic Details
Main Author: Frye, Clint D.
Language:en_US
Published: Kansas State University 2016
Subjects:
Online Access:http://hdl.handle.net/2097/34560