Optimization and characterization of bulk hexagonal boron nitride single crystals grown by the nickel-chromium flux method
Doctor of Philosophy === Department of Chemical Engineering === James H. Edgar === Hexagonal boron nitride (hBN) is a wide bandgap III-V semiconductor that has seen new interest due to the development of other III-V LED devices and the advent of graphene and other 2-D materials. For device applicati...
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| Language: | en_US |
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Kansas State University
2016
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| Online Access: | http://hdl.handle.net/2097/32797 |