Epitaxial growth of icosahedral boron arsenide on silicon carbide substrates: improved process conditions and electrical properties
Doctor of Philosophy === Department of Chemical Engineering === James H. Edgar === The exceptional radiation resistance, high melting point, and wide energy bandgap (3.2 eV) of icosahedral boron arsenide, B[subscript]12As[subscript]2, make it an attractive candidate for applications in radiation int...
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| Language: | en_US |
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Kansas State University
2011
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| Online Access: | http://hdl.handle.net/2097/13122 |