Analytical Modeling Of Quantum Thershold Voltage For Short Channel Multi Gate Silicon Nanowire Transistors

Analytical Modeling Of Quantum Thershold Voltage For Short Channel Multi Gate Silicon Nanowire Transistors

Silicon nanowire based multiple gate metal oxide field effect transistors(MG-MOSFET) appear as replacements for conventional bulk transistors in post 45nm technology nodes. In such transistors the short channel effect(SCE) is controlled by the device geometry, and hence an undoped (or, lightly doped...

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Bibliographic Details
Main Author: Kumar, P Rakesh
Other Authors: Mahapatra, Santanu
Language:en_US
Published: 2010
Subjects:
Transistors
Silicon Nanowire Transistors
Quantum Threshold Voltage
Threshold Voltage Models
Transistors - Modeling
Double Gate Transistor
Cylindrical Gate Transistor
Quad Gate Transistor
Tri Gate Transistor
Cylindrical Gate All-around Transistor
Silicon Nanowire Transistor
MOSFET
Electronic Engineering
Online Access:http://hdl.handle.net/2005/969

Internet

http://hdl.handle.net/2005/969

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