Impact Of Energy Quantization On Single Electron Transistor Devices And Circuits

Impact Of Energy Quantization On Single Electron Transistor Devices And Circuits

Although scalingof CMOS technology has been predicted to continue for another decade, novel technological solutions are required to overcome the fundamental limitations of the decananometer MOS transistors. Single Electron Transistor (SET) has attracted attention mainly because of its unique Coulomb...

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Bibliographic Details
Main Author: Dan, Surya Shankar
Other Authors: Mahapatra, Santanu
Language:en_US
Published: 2010
Subjects:
Transistor Devices (Electronics)
Energy Quantization
Inverter Logic
Single Electron Transistor (SET)
Monte Carlo Simulation
Orthodox Theory
Compact Modeling
Single Electron Tunneling
Noise Margin
SET Circuits
Single Electron Inverter Performance
Coulomb Blockade
Negative Differential Resistance
Electronic Engineering
Online Access:http://hdl.handle.net/2005/666

Internet

http://hdl.handle.net/2005/666

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