Electrical Switching And Thermal Studies On Certain Ternary Telluride Glasses With Silicon Additive And Investigations On Their Suitability For Phase Change Memory Applications
The Phase Change Memories (PCM) based on chalcogenide glasses are being considered recently as a possible replacement for conventional Non Volatile Random Access Memories (NVRAM). The main advantages of chalcogenide phase change memories are their direct write/overwrite capability, lower voltages of...
| Main Author: | |
|---|---|
| Other Authors: | |
| Language: | en_US |
| Published: |
2009
|
| Subjects: | |
| Online Access: | http://hdl.handle.net/2005/617 |