Efficient Dislocation Reduction Methods for Integrating Gallium Nitride HEMTs on Si
Gallium Nitride (GaN) and its alloys with InN and AlN, the III-nitrides, are of interest for a variety of high power-high frequency electronics and optoelectronics applications. However, unlike Si and GaAs technology that have been developed on native substrates, III-nitride devices have been develo...
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| Language: | en_US |
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2017
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| Online Access: | http://hdl.handle.net/2005/2789 http://etd.ncsi.iisc.ernet.in/abstracts/3656/G26626-Abs.pdf |