Dissimilar Hetero-Interfaces with Group III-A Nitrides : Material And Device Perspectives

Dissimilar Hetero-Interfaces with Group III-A Nitrides : Material And Device Perspectives

Group III-A nitrides (GaN, AlN, InN and alloys) are materials of considerable contemporary interest and currently enable a wide variety of optoelectronic and high-power, high-frequency electronic applications. All of these applications utilize device structures that employ a single or multiple heter...

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Bibliographic Details
Main Author: Chandrasekar, Hareesh
Other Authors: Raghavan, Srinivasan
Language:en_US
Published: 2017
Subjects:
Group III-A Nitrides
High Electron Mobility Transistor
Nitride Semiconductors
Aluminium Nitride-Silicon Interface
Gallium Nitride Films
Aluminium Nitride Thin Films
Nitride Films
Nitride Epitaxy
Nitride Hetero-Interfaces
Aluminium Nitride (AlN) Epitaxial Layers
GaN Films
AlN/Si Hetero-interface
AlN-Si Interface
Materials Science
Online Access:http://hdl.handle.net/2005/2740
http://etd.ncsi.iisc.ernet.in/abstracts/3567/G27837-Abs.pdf

Internet

http://hdl.handle.net/2005/2740
http://etd.ncsi.iisc.ernet.in/abstracts/3567/G27837-Abs.pdf

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