Group III Nitride/p-Silicon Heterojunctions By Plasma Assisted Molecular Beam Epitaxy
The present work focuses on the growth and characterizations of GaN and InN layers and nanostructures on p-Si(100) and p-Si(111) substrates by plasma-assisted molecular beam epitaxy and the studies of GaN/p-Si and InN/p-Si heterojunctions properties. The thesis is divided in to seven different chapt...
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| Language: | en_US |
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2015
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| Online Access: | http://etd.iisc.ernet.in/handle/2005/2454 http://etd.ncsi.iisc.ernet.in/abstracts/3168/G25489-Abs.pdf |