Facile and Process Compatible Growth of High-k Gate Dielectric Materials (TiO2, ZrO2 and HfO2) on Si and the Investigation of these Oxides and their Interfaces by Deep Level Transient Spectroscopy

Facile and Process Compatible Growth of High-k Gate Dielectric Materials (TiO2, ZrO2 and HfO2) on Si and the Investigation of these Oxides and their Interfaces by Deep Level Transient Spectroscopy

The continuous downscaling has enforced the device size and oxide thickness to few nanometers. After serving for several decades as an excellent gate oxide layer in complementary metal oxide semiconductor (CMOS) devices, the thickness of SiO2 layer has reached to its theoretical limits. Ultra-thin f...

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Bibliographic Details
Main Author: Kumar, Arvind
Other Authors: Koteswara Rao, K S R
Language:en_US
Published: 2018
Subjects:
Metal Oxide Semiconductors - Silicon Interfaces
Metal Oxide Semiconductors
Metal Oxide Semiconductors Deep Level Transient Spectroscopy
Integrated Circuit
Thermal Stability
Thermal Evaporation
High-κ Gate Dielectrics
High-κ TiO2 MOS Structures
High-κ Titania Thin Films
High-k ZrO2 Gate Dielectrics
Spin-coated HfO2 Thin Films
High-κ TiO2 Thin Films
High-κ ZrO2/Si MOS Structure
Sol-gel Spin-coating Method
Physics
Online Access:http://etd.iisc.ernet.in/2005/3820
http://etd.iisc.ernet.in/abstracts/4691/G28261-Abs.pdf

Internet

http://etd.iisc.ernet.in/2005/3820
http://etd.iisc.ernet.in/abstracts/4691/G28261-Abs.pdf

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