Exploration of Real and Complex Dispesion Realtionship of Nanomaterials for Next Generation Transistor Applications

Exploration of Real and Complex Dispesion Realtionship of Nanomaterials for Next Generation Transistor Applications

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Technology scaling beyond Moore’s law demands cutting-edge solutions of the gate length scaling in sub-10 nm regime for low power high speed operations. Recently SOI technology has received considerable attention, however manufacturable solutions in sub-10 nm technologies are not yet known for futur...

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Bibliographic Details
Main Author: Ghosh, Ram Krishna
Other Authors: Mahapatra, Santanu
Language:en_US
Published: 2018
Subjects:
Nanoelectronics
Next Generation Nano-Electronic Devices
Silicon Nanowires
Silicon Nanotechnology
Hybrid Graphene
Transition Metal Chalcogenide
Nanomaterials
SiNW
Nanomaterials - Transistor Applications
Band Gap Model
MoS2
Nanoribbons
Tunnel Field Effect Transistors (TFETs)
Nanotechnology
Online Access:http://hdl.handle.net/2005/3288
http://etd.ncsi.iisc.ernet.in/abstracts/4150/G25643-Abs.pdf

Internet

http://hdl.handle.net/2005/3288
http://etd.ncsi.iisc.ernet.in/abstracts/4150/G25643-Abs.pdf

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