Segregação do índio em cristais Ga1-xInxSb obtidos pelo método bridgman vertical
Made available in DSpace on 2013-08-07T18:55:02Z (GMT). No. of bitstreams: 1 000441953-Texto+Completo-0.pdf: 3874457 bytes, checksum: 47b9d1258c5c65de4ec4b58c6e426780 (MD5) Previous issue date: 2012 === This paper describes the growth and characterization of III-V compound semiconductors, Ga1-xInx...
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| Language: | Portuguese |
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Pontifícia Universidade Católica do Rio Grande do Sul
2013
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| Online Access: | http://hdl.handle.net/10923/3370 |