Modeling and simulation of self-heating effects in p-type MOS transistors
The complementary metal-oxide-semiconductor (CMOS) scaling process of the recent decades, coupled with new device structures and materials, has aggravated thermal problems and turned them into major reliability issues for deeply-scaled devices. As a consequence, the thermal transport dynamic and its...
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| Format: | Others |
| Language: | English |
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2018
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| Online Access: | http://hdl.handle.net/10183/186033 |