Transistores de tunelamento induzido por efeito de campo aplicados a circuitos básicos.

Transistores de tunelamento induzido por efeito de campo aplicados a circuitos básicos.

Este trabalho apresenta o estudo de transistores de tunelamento controlados por efeito de campo, denominados TFETs. Foram realizadas análises com base em explicações teóricas, simulações numéricas e medidas experimentais para demonstrar a viabilidade do uso desta tecnologia em blocos de circuito...

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Bibliographic Details
Main Author:	Marcio Dalla Valle Martino
Other Authors:	Paula Ghedini Der Agopian
Language:	Portuguese
Published:	Universidade de São Paulo 2017
Subjects:	Circuitos analógicos Microeletrônica Transistores Analog circuits Band-to-band tunneling FinFET Line TFET Point TFET Subthreshold slope Temperature impact TFET
Online Access:	http://www.teses.usp.br/teses/disponiveis/3/3140/tde-05032018-110248/

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