Segrega??o do ?ndio em cristais Ga1-xInxSb obtidos pelo m?todo bridgman vertical
Made available in DSpace on 2015-04-14T13:58:53Z (GMT). No. of bitstreams: 1 441953.pdf: 3874457 bytes, checksum: 47b9d1258c5c65de4ec4b58c6e426780 (MD5) Previous issue date: 2012-08-27 === This paper describes the growth and characterization of III-V compound semiconductors, Ga1-xInxSb lightly dop...
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| Format: | Others |
| Language: | Portuguese |
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Pontif?cia Universidade Cat?lica do Rio Grande do Sul
2015
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| Online Access: | http://tede2.pucrs.br/tede2/handle/tede/3214 |