Wide band-gap nanostructure based devices
Wide band gap based nanostructures have being attracting much research interest because of their promise for application in optoelectronic devices. Among those wide band gap semiconductors, gallium nitride (GaN) and zinc oxide (ZnO) are the most commonly studied and optoelectronic devices based on...
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| Language: | English |
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The University of Hong Kong (Pokfulam, Hong Kong)
2013
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| Online Access: | http://hdl.handle.net/10722/181497 |